Introduction
Silicon Carbide (SiC) is a type of IV-IV compound semiconductor material composed of silicon (Si) and carbon (C), with high hardness, high melting point, high thermal conductivity, high chemical stability and other excellent properties. The silicon carbide mineral that exists in nature is called Moissanite, but the SiC for industrial applications is mainly synthesized by artificial synthesis (such as Acheson method, CVD method, etc.).
Properties of silicon carbide
Physical property
High hardness (Mohs hardness of about 9.5, second only to diamond).
High melting point (approx. 2700°C, high temperature resistant).
High thermal conductivity (better than silicon, good heat dissipation performance).
Strong chemical inertness (corrosion resistance, oxidation resistance).
Electrical property
Wide band gap (~ 3.2eV, 3 times that of silicon, suitable for high pressure and high temperature applications).
High breakdown electric field strength (10 times that of silicon to make high-voltage devices).
High electron saturation drift speed (suitable for high frequency applications).
The main role of silicon carbide
As a semiconductor material: used to manufacture high-performance power electronic devices (such as MOSFETs, diodes).
As a wear-resistant material: used for mechanical seals, cutting tools, bulletproof armor, etc.
As refractory material: used for high temperature furnace lining, spacecraft thermal protection.
Optical applications: Used in LED substrate, UV detector, etc.
Applications of silicon carbide
1. Power Electronics (Core applications)
Power devices: SiC MOSFETs, diodes, IGBT modules, etc., for electric vehicles, photovoltaic inverters, smart grids.
Advantages: Reduce energy loss, increase switching frequency, and reduce device size.
Typical application: Tesla electric vehicles use SiC power modules to improve battery life.
2. New energy vehicles
Electric drive systems: SiC devices increase motor controller efficiency and reduce battery energy consumption.
Charging pile: Support higher voltage (such as 800V fast charge).
3. Photovoltaic/wind power
Inverter: Improve solar power conversion efficiency and reduce thermal management costs.
4. Radio Frequency (RF) devices
5G communication: SIC-based GaN devices are used for high-frequency power amplifiers in base stations.
5. Industry and Energy
High Voltage Power transmission: SiC devices are used for flexible direct current power transmission (HVDC).
Industrial motor: inverter energy-saving transformation.
6. Defense and Space
High-temperature components: rocket nozzle, spacecraft thermal protection layer.
Radar systems: high power microwave devices.
7. Other areas
Wear-resistant materials: sandpaper, cutting tools, bearings.
Jewelry: Synthetic moissanite as a diamond substitute.
|
Grade |
Chemical Composition (%) |
|||
|
SiC |
FC |
Fe2O3 |
Moisture |
|
|
≥Min |
≤Max |
|||
|
SiC 90 |
90.0 |
3.0 |
1.20 |
0.50
|
|
SiC 88 |
88.0 |
4.0 |
1.50 |
|
|
SiC 85 |
85.0 |
4.5 |
1.80 |
|
|
SiC 80 |
80.0 |
5.0 |
3.0 |
|
|
SiC 70 |
70.0 |
8.0 |
4.0 |
|
Size
1-10mm, 0-10mm, 0-5mm,0.5-5mm; etc
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